RT922 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

RT922

4/15

DocID026924 Rev 1

Electrical characteristics

Table 3. Electrical characteristics measured at VCC = +3 V, VCC- = 0 V, Vicm = VCC/2,

Tamb = 25 °C, and RL connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Vio

Input offset voltage

Tmin ≤ Tamb ≤ Tmax

ΔVio/ΔT Input offset voltage drift

μV/°C

Iio

Input offset current

Vout = VCC/2

Tmin ≤ Tamb ≤ Tmax

130

Iib

Input bias current

Vout = VCC/2

Tmin ≤ Tamb ≤ Tmax

100

VOH

High level output voltage

RL= 10 kΩ

Tmin ≤ Tamb ≤ Tmax

2.90

RL = 600 Ω

Tmin ≤ Tamb ≤ Tmax

2.87

RL = 32 Ω

2.63

VOL

Low level output voltage

RL= 10 kΩ

Tmin ≤ Tamb ≤ Tmax

RL = 600 Ω

Tmin ≤ Tamb ≤ Tmax

100

RL = 32 Ω

180

Avd

Large signal voltage gain

RL= 10 kΩ, Vout = 2 Vp-p

Tmin ≤ Tamb ≤ Tmax

200

V/mV

RL = 600 Ω, Vout = 2 Vp-p

Tmin ≤ Tamb ≤ Tmax

RL = 32 Ω, Vout = 2 Vp-p

ICC

Total supply current

No load, Vout = VCC/2

Tmin ≤ Tamb ≤ Tmax

3.2

GBP

Gain bandwidth product

RL = 600 Ω

4MHz

CMR

Common mode rejection ratio

Vicm = 0 to 3 V

Tmin ≤ Tamb ≤ Tmax

SVR

Supply voltage rejection ratio

VCC = 2.7 to 3.3 V

Tmin ≤ Tamb ≤ Tmax

Output short-circuit current

Slew rate

0.7

1.3

μs

φm

Phase margin at unit gain

RL = 600 Ω, CL = 100 pF

Degrees

Gain margin

Equivalent input noise voltage

f = 1 kHz

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