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RPC564L60L5BOSY 数据表(PDF) 105 Page - STMicroelectronics

部件名 RPC564L60L5BOSY
功能描述  microcontroller for Aerospace and Defense, SIL3/ASILD safety applications
PDF  137 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RPC564L60L5BOSY 数据表(HTML) 105 Page - STMicroelectronics

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RPC56EL60L5
Electrical characteristics
136
Figure 9. Transient Behavior during Sampling Phase
In particular two different transient periods can be distinguished:
A first and quick charge transfer from the internal capacitance CP1 and CP2 to the
sampling capacitance CS occurs (CS is supposed initially completely discharged):
considering a worst case (since the time constant in reality would be faster) in which
CP2 is reported in parallel to CP1 (call CP = CP1 + CP2), the two capacitances CP and
CS are in series, and the time constant is
Equation 5
Equation 5 can again be simplified considering only CS as an additional worst
condition. In reality, the transient is faster, but the A/D converter circuitry has been
designed to be robust also in the very worst case: the sampling time TS is always much
longer than the internal time constant:
Equation 6
The charge of CP1 and CP2 is redistributed also on CS, determining a new value of the
voltage VA1 on the capacitance according to Equation 7:
Equation 7
A second charge transfer involves also CF (that is typically bigger than the on-chip
capacitance) through the resistance RL: again considering the worst case in which CP2
VA
VA1
VA2
t
TS
VCS
Voltage Transient on CS
V <0.5 LSB
1
2
1 < (RSW + RAD) CS << TS
2 = RL (CS + CP1 + CP2)
1
R
SW
R
AD
+

=
C
P
C
S
C
P
C
S
+
----------------------
1
R
SW
R
AD
+

C
S
T
S
«
V
A1
C
S
C
P1
C
P2
++

V
A
C
P1
C
P2
+

=



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