September 2015

DocID028331 Rev 1

1/15

This is information on a product in full production.

www.st.com

STB35N60DM2

N-channel 600 V, 0.094

Ω typ., 28 A MDmesh™ DM2

Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

max.

STB35N60DM2

600 V

0.110

Ω

28 A

210 W



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB35N60DM2

35N60DM2

D²PAK

Tape and reel

1

3

TAB

D2PAK