63SPB080 datasheet(2/4 Pages) SMC

2 / 4 page

SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N1023, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

63SPB080/A

63SPB100/A

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

(63SPB080/A)

Peak Inverse Voltage

VRWM

100

(63SPB100/A)

Max. Average Forward

IF(AV)

50% duty cycle, rectangular

wave form

Max. Peak One Cycle Non-

Repetitive Surge Current

(per leg)

IFSM

8.3 ms, half Sine pulse

860

Non-Repetitive Avalanche

Energy(per leg)

EAS

TJ=25℃,IAS=0.75A,

L=40 mH

11.25

Repetitive Avalanche

Current(per leg)

IAR

IAS decaying linearly to 0 in

1 μsec Frequency limited

by TJ max. VA=1.5×VR

0.75

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Max. Forward Voltage Drop*

VF1

@ 60A, Pulse, TJ = 25 °C

0.87

VF2

@ 60A, Pulse, TJ = 125 °C

0.72

Max. Reverse Current (per

leg) *

IR1

@VR = rated VR

TJ = 25 °C

1.0

IR2

@VR = rated VR

TJ = 125 °C

24.0

Max. Junction Capacitance

(per leg)

@VR = 5V, TC = 25 °C

fSIG = 1MHz

1500

Max. Voltage Rated of

Change

dv/dt

10,000

V/μs

* Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

Specification

Units

Max. Junction Temperature

-55 to +175

°C

Max. Storage Temperature

Tstg

-55 to +175

°C

Maximum Thermal

Resistance Junction to Case

RθJC

DC operation

0.37

°C/W

Case Style

SPD-2/A

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