STF26N60M2, STFI26N60M2

Electrical ratings

DocID027600 Rev 2

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID

(1)

20

A

13

IDM

(2)

Drain current (pulsed)

80

A

30

W

dv/dt

(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Insulation withstand voltage (RMS) from all three leads to

2.5

kV

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

(4)

≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

4.2

°C/W

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

(1)

Avalanche current, repetitive or not repetitive

3.8

A

EAR

(2)

Single pulse avalanche energy

250

mJ

Notes:

(1)

(2)