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STFU13N65M2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STFU13N65M2
功能描述  N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™M2 Power MOSFET in a TO-220FP ultra narrow leads package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STFU13N65M2 数据表(HTML) 5 Page - STMicroelectronics

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STFU13N65M2
Electrical characteristics
DocID027538 Rev 1
5/12
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
10
A
ISDM(1)
Source-drain current
(pulsed)
-
40
A
VSD(2)
Forward on voltage
ISD = 10 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
ISD = 10 A, di/dt = 100 A/µs,
VDD = 60 V
-
312
ns
Qrr
Reverse recovery charge
-
2.7
µC
IRRM
Reverse recovery current
-
17.5
A
trr
Reverse recovery time
ISD = 10 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
-
464
ns
Qrr
Reverse recovery charge
-
4.1
µC
IRRM
Reverse recovery current
-
17.5
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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