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STGIPN3H60AT 数据表(PDF) 6 Page - STMicroelectronics

部件名 STGIPN3H60AT
功能描述  SLLIMM™nano (small low-loss intelligent molded module) IPM, 3 A - 600 V 3-phase IGBT inverter bridge
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGIPN3H60AT 数据表(HTML) 6 Page - STMicroelectronics

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Electrical ratings
STGIPN3H60AT
6/19
DocID026945 Rev 1
2
Electrical ratings
2.1
Absolute maximum ratings
Table 3. Inverter part
Symbol
Parameter
Value
Unit
VCES
Each IGBT collector emitter voltage (VIN
(1) = 0)
1.
Applied between
HINi, LINi and GND for i = U, V, W.
600
V
± IC
(2)
2.
Calculated according to the iterative formula:
Each IGBT continuous collector current at
TC = 25 °C
3A
± ICP
(3)
3.
Pulse width limited by max junction temperature.
Each IGBT pulsed collector current
18
A
PTOT
Each IGBT total dissipation at TC = 25 °C
8
W
Table 4. Control part
Symbol
Parameter
Min.
Max.
Unit
VOUT
Output voltage applied between OUTU, OUTV,
OUTW - GND
Vboot -18
Vboot + 0.3
V
VCC
Low voltage power supply
- 0.3
18
V
Vboot
Bootstrap voltage
- 0.3
618
V
VIN
Logic input voltage applied between HINi, LINi and
GND for i = U, V, W
- 0.3
VCC + 0.3
V
ΔVOUT/dT Allowed output slew rate
50
V/ns
Table 5. Total system
Symbol
Parameter
Value
Unit
VISO
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
1000
V
TJ
Power chips operating junction temperature
-40 to 150
°C
TC
Module case operating temperature
-40 to 125
°C
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=



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