STL11N6F7 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STL11N6F7

4/13

DocID028134 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID= 1mA, VGS = 0 V

IDSS

Zero gate voltage drain current

VGS= 0 V , VDS=60 V

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 5.5 A

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 30 V, f = 1 MHz,VGS = 0 V

1035

Coss

Output capacitance

450

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V, ID = 11 A,

VGS = 10 V

(see Figure 14: "Test circuit for gate

charge behavior")

Qgs

Gate-source charge

5.7

Qgd

Gate-drain charge

5.7

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 30 V, ID = 5.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit for resistive

load switching times")

14.5

Rise time

15.3

td(off)

Turn-off delay

time

19.4

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on

voltage

ISD = 11 A, VGS = 0 V

1.2

trr

Reverse

recovery time

ID = 11 A, di/dt = 100 A/µs

VDD = 48 V

(see Figure 15: "Test circuit for inductive

load switching and diode recovery

times")

26.8

Qrr

Reverse

recovery charge

14.2

IRRM

Reverse

recovery current

1.06

Notes:

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