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STL16N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STL16N60M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() May 2015 DocID027201 Rev 1 1/15 This is information on a product in full production. www.st.com STL16N60M2 N- channel 600 V, 0.290 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID STL16N60M2 650 V 0.355 Ω 8 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STL16N60M2 16N60M2 PowerFLAT™ 5x6 HV Tape and reel 1 2 3 4 PowerFLAT™ 5x6 HV AM15540v3 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) |
类似零件编号 - STL16N60M2 |
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类似说明 - STL16N60M2 |
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