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STL50DN6F7 数据表(PDF) 4 Page - STMicroelectronics

部件名 STL50DN6F7
功能描述  High avalanche ruggedness
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL50DN6F7 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL50DN6F7
4/15
DocID028132 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID= 1 mA
60
V
IDSS
Zero gate voltage drain current
VDS= 60 V,VGS= 0 V
1
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID
= 250 μA
2
4
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 7.5 A
9
11
mΩ
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 30V, f = 1 MHz,VGS= 0 V
-
1035
-
pF
Coss
Output capacitance
-
450
-
pF
Crss
Reverse transfer
capacitance
-
53
-
pF
Qg
Total gate charge
VDD = 30 V, ID = 15 A,
VGS = 10 V
(see Figure 14: "Test circuit for
gate charge behavior")
-
17
-
nC
Qgs
Gate-source charge
-
5.7
-
nC
Qgd
Gate-drain charge
-
5.7
-
nC
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30V, ID =7.5 A,
RG
= 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit for
resistive load switching times"
-
14.5
-
ns
tr
Rise time
-
15.3
-
ns
td(off)
Turn-off delay time
-
19.4
-
ns
tf
Fall time
-
8
-
ns
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD(1)
Forward on voltage
ISD = 15 A, VGS = 0 V
-
1.2
V
trr
Reverse recovery time
ISD = 15 A, di/dt = 100 A/µs,
VDD = 48 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
26.8
ns
Qrr
Reverse recovery charge
-
14.2
nC
IRRM
Reverse recovery current
-
1.06
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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