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STP12N60M2 数据表(PDF) 7 Page - STMicroelectronics |
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STP12N60M2 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 13 page  STP12N60M2 Electrical characteristics DocID027902 Rev 1 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics T j(°C) I D = 250 µA V GS(th) 1.00 0.90 0.80 0.70 -50 0 (norm) 1.10 50 100 AM03184v1 GIPG290120151002ALS 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 4 8 12 16 V SD (V) T j = -50 °C T j = -25 °C T j = 150 °C I SD (A) |
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