STP45N40DM2AG datasheet(1/13 Pages) STMICROELECTRONICS

部件名	STP45N40DM2AG

功能描述	Extremely low gate charge and input capacitance

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 13 page

September 2015

DocID028082 Rev 2

1/13

This is information on a product in full production.

www.st.com

STP45N40DM2AG

Automotive N-

channel 400 V, 0.058 Ω typ., 38 A MDmesh™

DM2 Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

PTOT

STP45N40DM2AG

400 V

0.072 Ω

38 A

250 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP45N40DM2AG

45N40DM2

TO-220

Tube

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STMicroelectronics	STP45N10	431Kb / 10P	N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR Jun-1998
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类似说明 - STP45N40DM2AG

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More results

STP45N40DM2AG 数据表(PDF) 1 Page - STMicroelectronics

STP45N40DM2AG 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP45N40DM2AG

类似说明 - STP45N40DM2AG

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STP45N40DM2AG 数据表(PDF) 1 Page - STMicroelectronics

STP45N40DM2AG 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP45N40DM2AG

类似说明 - STP45N40DM2AG

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