MJD360T4-A datasheet(3/7 Pages) STMICROELECTRONICS

部件名	MJD360T4-A

功能描述	Low voltage complementary power transistors

PDF	7 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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MJD360T4-A, MJD361T4-A

Electrical characteristics

Doc ID 16126 Rev 1

3/7

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Note:

For PNP types voltage and current values are negative.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCE = 60 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 4 V

100

µA

V(BR)CEO

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 1 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IC = 100 µA

VCE(sat)

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2 %.

Collector-emitter

saturation voltage

IC = 200 mA

IB = 10 mA

IC = 1 A

IB = 50 mA

IC = 3 A

IB = 150 mA

0.1

0.3

0.9

hFE

(1)

DC current gain

IC = 200 mA

VCE = 1 V

IC = 1 A

VCE = 4 V

IC = 3 A

VCE = 4 V

130

100

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