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STPS40L15C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS40L15C
功能描述  Low drop OR-ing power Schottky diode
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS40L15C 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS40L15C
2/8
Doc ID 4926 Rev 6
1
Characteristics
To evaluate the conduction losses use the following equation :
P = 0.18 x IF(AV) + 0.008 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
15
V
IF(RMS) Forward current rms
30
A
IF(AV)
Average forward current
Tcase = 140 °C
δ = 1
Total
40
A
Per diode
20
IFSM
Surge non repetitive forward
current
tp = 10 m, Sinusoidal
310
A
IRRM
Peak repetitive reverse current
tp = 2 µs, F= 1 kHz
2
A
IRSM
Non repetitive peak reverse current tp = 100 µs
3
A
PARM
Repetitive peak avalanche power
tp = 1µs, Tj = 25 °C
13140
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
125
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
1.6
°C/W
Total
0.85
Rth (c)
Coupling
0.1
°C/W
Table 4.
Static electrical characteristics (Per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test : tp = 380 µs, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
6
mA
Tj = 100 °C
200
500
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 19 A
0.41
V
Tj = 25 °C
IF = 40 A
0.52
Tj = 125 °C
IF = 19 A
0.28
0.33
Tj = 125 °C
IF = 40 A
0.42
0.50
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
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