Characteristics

STPS61H100C

2/7

Doc ID 10029 Rev 3

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode1) x R

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward rms current

80

A

Average forward current

δ = 0.5

Per diode

Per device

30

60

A

Surge non repetitive forward current

450

A

Repetitive peak avalanche power

26400

W

Storage temperature range

-65 to + 175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

0.9

0.6

°C/W

Junction to case

Coupling

0.3

°C/W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

Reverse leakage current

316

µA

4

16

mA

VF

(1)

Forward voltage drop

0.79

V

0.63

0.67

0.93

0.72

0.78

dPtot

dTj

<

1

Rth(j-a)