Characteristics

STPS30SM120S

2/14

DocID022919 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

120

V

Forward rms current

50

A

Average forward current

30

A

Surge non repetitive forward current

240

A

(1)

Repetitive peak avalanche power

1200

W

(2)

Maximum repetitive peak avalanche voltage

150

V

(2)

Maximum single-pulse peak avalanche voltage

150

V

Storage temperature range

-65 to +175

°C

150

°C

1.

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible

avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche

specification”.

2.

See Figure 9

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

TO-220AB and TO-220AB narrow leads

1.35

°C/W

TO-220FPAB

4

Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

-

55

275

µA

-

20

50

mA

(2)

Forward voltage drop

-

0.47

0.52

V

-

0.55

0.60

-0.79

-

0.60

0.65

-0.95

-

0.68

0.76

1.

2.