Characteristics

STPS2170

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DocID027019 Rev1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

170

V

160

V

Forward rms current

15

A

Average forward current,

2A

Surge non repetitive forward current

70

A

(1)

165

W

Storage temperature range

-65 to +175

°C

-40 to +175

°C

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible

avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche

specification”.

2.

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Junction to lead, SMAflat

20

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

2.8

µA

0.5

2.8

mA

(2)

Forward voltage drop

0.82

V

0.62

0.67

0.89

0.70

0.75