Characteristics

STPS3170

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DocID027020 Rev1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

170

V

160

V

Forward rms current

15

A

Average forward current,

3A

sinusoidal

SMAflat

75

A

SMBflat

80

(1)

210

W

Storage temperature range

-65 to +175

°C

-40 to +175

°C

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible

avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche

specification”.

2.

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Junction to lead, SMAflat

20

°C/W

Junction to lead, SMBflat

15

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

4.0

µA

0.73

4.0

mA

(2)

Forward voltage drop

0.82

V

0.63

0.67

0.89

0.70

0.75