September 2009

Doc ID 16288 Rev 1

1/7

7

STPSC1206

600 V power Schottky silicon carbide diode

Features

temperature

Description

These diodes are manufactured using silicon

carbide substrate. This wide bandgap material

supports the manufacture of a Schottky diode

structure with a high voltage rating. Such diodes

exhibit no or negligible recovery characteristics.

The recovery characteristics are independent of

the temperature.

Using these diodes will significantly reduce the

switching power losses of the associated MOS-

FET, and thus increase the efficiency of the

overall application. These diodes will then

outperform the power factor correction circuit

operating in hard switching conditions.

Table 1.

Device summary

12 A

600 V

175 °C

12 nC

K

A

TO-220AC

STPSC1206D

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