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STD10NF30 数据表(PDF) 4 Page - STMicroelectronics

部件名 STD10NF30
功能描述  Very low intrinsic capacitances
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD10NF30 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD10NF30
4/16
DocID026136 Rev 1
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
300
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 300 V
1
μA
V
DS
= 300 V, T
C
=125 °C
10
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
234
V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 5 A
0.28
0.33
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-780
-
pF
C
oss
Output capacitance
-
110
-
pF
C
rss
Reverse transfer
capacitance
-15
-
pF
Q
g
Total gate charge
V
DD
= 240 V, I
D
= 10 A,
V
GS
= 10 V
(see
Figure 14)
-23
-
nC
Q
gs
Gate-source charge
-
3.5
-
nC
Q
gd
Gate-drain charge
-
11.3
-
nC
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
Turn-on delay time
V
DD
= 150 V, I
D
= 5 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 13)
-13.5
-
ns
t
r
Rise time
-
9.5
-
ns
t
d(off)
Turn-off-delay time
-
32
-
ns
t
f
Fall time
-
9.5
-
ns



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