STD25NF20 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STD25NF20

功能描述	Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET™Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STD25NF20

4/16

DocID024372 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 200 V

µA

VDS = 200 V, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 10 A

0.10

0.125

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

940

Coss

Output capacitance

197

Crss

Reverse transfer

capacitance

-30

Total gate charge

VDD = 160 V, ID = 20 A,

VGS = 10 V

(see Figure 13)

-28

Qgs

Gate-source charge

5.6

Qgd

Gate-drain charge

14.5

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 100 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and Figure 17)

-15

tr(v)

Voltage rise time

td(off)

Turn-off-delay time

tf(i)

Fall time

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