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STF9N60M2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STF9N60M2
功能描述  N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF9N60M2 数据表(HTML) 7 Page - STMicroelectronics

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DocID024728 Rev 2
7/15
STF9N60M2, STFI9N60M2
Electrical characteristics
15
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V(BR)DSS vs temperature
C
100
10
1
0.1
0.1
1
VDS(V)
(pF)
10
Ciss
Coss
Crss
100
1000
AM15870v1
Eoss
2
1
0
0
100
VDS(V)
(µJ)
400
200
300
500
600
AM15874v1
VGS(th)
0.75
0.7
-50
0
TJ(°C)
(norm)
-25
0.8
75
25
50
100 125
0.85
0.9
ID=250µA
0.95
1.0
1.05
1.15
1.1
AM15871v1
RDS(on)
1.1
0.9
0.7
0.5
-50
TJ(°C)
(norm)
-25
25
0
50
125
1.7
1.5
1.3
VGS=10 V
ID=3 A
75
100
1.9
2.1
2.3
2.5
AM15872v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0
0.2
0.4
0.6
0.8
1.0
TJ=-50°C
TJ=150°C
TJ=25°C
1.2
1.4
AM15873v1
V(BR)DSS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.93
0.95
0.99
1.01
1.03
1.05
125
0.97
1.07
ID=1mA
1.09
1.11
AM15867v1



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