STI360N4F6 datasheet(4/11 Pages) STMICROELECTRONICS

部件名	STI360N4F6

功能描述	N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages

PDF	11 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 11 page

Electrical characteristics

STI360N4F6, STP360N4F6

4/11

Doc ID 023419 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 250 µA

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = 40 V

µA

VDS = 40 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

4.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 60 A

TBD

1.8

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

17930

Coss

Output capacitance

1560

Crss

Reverse transfer

capacitance

1170

Total gate charge

VDD = 20 V, ID = 120 A,

VGS = 10 V

340

Qgs

Gate-source charge

TBD

Qgd

Gate-drain charge

TBD

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 20 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

-TBD

td(off)

Turn-off-delay time

Fall time

-TBD

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