STL8DN10LF3 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STL8DN10LF3

功能描述	Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 double island package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Electrical characteristics

STL8DN10LF3

4/15

DocID023009 Rev 6

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 100 V

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 4 A

VGS= 5 V, ID= 4 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =25 V, f=1 MHz,

VGS=0

-970

Coss

Output capacitance

115

Crss

Reverse transfer

capacitance

11.5

Total gate charge

VDD=50 V, ID = 7.8 A

VGS =10 V

Figure 13

20.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

Intrinsic gate resistance

f=1 MHz open drain

3.65

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=50 V, ID= 7.8 A,

RG=4.7 Ω, VGS=10 V

Figure 14

-8.7

Rise time

9.6

td(off)

Turn-off delay time

50.6

Fall time

5.2

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