Characteristics

STPS3L45AF

2/8

DocID024949 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Test conditions

Value

Unit

Repetitive peak reverse voltage

45

V

Average forward current

3

A

Surge non repetitive forward

current

75

A

(1)

1.

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

70

W

(2)

2.

Refer to Figure 11

Maximum repetitive peak

avalanche voltage

50

V

VASM

(2)

Maximum single pulse peak

avalanche voltage

50

V

Storage temperature range

-65 to + 175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Thermal resistance junction to lead

15

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Max.

Unit

(1)

1.

Reverse leakage current

80

300

µA

66

135

mA

(1)

Forward voltage drop

0.462

0.57

V

0.41

0.51

dP tot

dTj

---------------

1

Rth j

a

–

()

--------------------------

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