Characteristics

STPS10H100C

4/10

DocID024444 Rev 1

Figure 11. Thermal resistance junction to ambient versus copper surface under tab

Figure 7. Relative variation of thermal

impedance junction to case versus pulse

duration (TO-220FPAB)

Figure 8. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

tp

Single pulse

per diode

0

102030

4050

60708090 100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

IR(μA)

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

VR(V)

Figure 9. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 10. Forward voltage drop versus forward

current (maximum values, per diode)

1

2

5

10

20

50

100

10

100

1000

C(pF)

F=1MHz

Tj=25°C

VR(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1.0

10.0

100.0

IFM(A)

Tj=125°C

Typical values

Tj=125°C

Tj=25°C

Tj=150°C

Typical values

VFM(V)

0

2

4

6

8

101214161820

0

10

20

30

40

50

60

70

80

Rth(j-a) (°C/W)

S(Cu) (cm²)

Epoxy printed circuit board FR4,

copper thickness: 35μm