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STPSC6TH13TI 数据表(PDF) 3 Page - STMicroelectronics |
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STPSC6TH13TI 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page  DocID024696 Rev 3 3/8 STPSC6TH13TI Characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit Qcj (1) Total capacitive charge VR = 400 V 18 nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz 300 pF VR = 400 V, Tc = 25 °C, F = 1 MHz 30 1. Most accurate value for the capacitive charge: Figure 1. Forward voltage drop versus forward current (typical values, low level, per diode) Figure 2. Forward voltage drop versus forward current (typical values, high level, per diode) Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 4. Peak forward current versus case temperature (per diode) |
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