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STS6P3LLH6 数据表(PDF) 4 Page - STMicroelectronics |
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STS6P3LLH6 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Electrical characteristics STS6P3LLH6 4/15 DocID024219 Rev 2 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA 30 V V IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V 1 µA VDS=30 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3 A 0.024 0.03 Ω VGS = 4.5 V, ID = 3 A 0.038 0.05 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 24 V, f = 1 MHz, VGS = 0 - 1450 - pF Coss Output capacitance - 178 - pF Crss Reverse transfer capacitance -120 - pF Qg Total gate charge VDD=24 V ID=6 A VGS= 4.5 V -12 - nC Qgs Gate-source charge - 4.4 - nC Qgd Gate-drain charge - 5 - nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 24 V, ID = 3 A RG=4.7 Ω, VGS = 10 V Figure 13 -15 - ns tr Rise time - 15 - ns td(off) Turn-off delay time - 24 - ns tf Fall time - 21 - ns |
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