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STS6P3LLH6 数据表(PDF) 4 Page - STMicroelectronics

部件名 STS6P3LLH6
功能描述  High avalanche ruggedness
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS6P3LLH6 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STS6P3LLH6
4/15
DocID024219 Rev 2
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA
30
V
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 30 V
1
µA
VDS=30 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
1
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 3 A
0.024
0.03
Ω
VGS = 4.5 V, ID = 3 A
0.038
0.05
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 24 V, f = 1 MHz,
VGS = 0
-
1450
-
pF
Coss
Output capacitance
-
178
-
pF
Crss
Reverse transfer
capacitance
-120
-
pF
Qg
Total gate charge
VDD=24 V ID=6 A
VGS= 4.5 V
-12
-
nC
Qgs
Gate-source charge
-
4.4
-
nC
Qgd
Gate-drain charge
-
5
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 24 V, ID = 3 A
RG=4.7 Ω, VGS = 10 V
Figure 13
-15
-
ns
tr
Rise time
-
15
-
ns
td(off)
Turn-off delay time
-
24
-
ns
tf
Fall time
-
21
-
ns



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