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STTH30S12 数据表(PDF) 4 Page - STMicroelectronics |
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STTH30S12 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH30S12 4/8 DocID026665 Rev 1 Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) 0 800 1600 2400 3200 4000 4800 0 50 100 150 200 250 300 350 400 450 500 QRR(nC) I F = I F(AV) V R = 600 V T j = 125 °C dIF/dt(A/µs) SFACTOR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 400 450 500 I F = I F(AV) V R = 600 V T j = 125 °C dIF/dt(A/µs) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Junction capacitance versus reverse voltage applied (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 Tj(°C) I F=IF(AV) V R=600 V Reference: T j=125 °C I RM S FACTOR Q RR C(pF) 10 100 1000 1 10 100 1000 10000 F = 1 MHz V OSC = 30 mVRMS T j = 25 °C V R (V) |
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