STTH1008DTI datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH1008DTI

2/9

DocID023113 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.65 x IF(AV) + 0.04 x IF

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

800

IF(RMS)

Forward rms current

IF(AV)

Average forward current,

 = 0.5

Tc = 85 °C

IFRM

Repetitive peak forward current

Tc = 135 °C, = 0.3

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

Tstg

Storage temperature range

-65 to +175

°C

Maximum junction temperature

150

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

Table 4. Static electrical characteristics

Symbol

Parameters

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

200

(2)

Forward voltage drop

Tc = 25 °C

IF = 10 A

2.15

2.5

Tc = 150 °C

1.7

2.05

Tc = 25 °C

IF = 20 A

2.45

2.85

Tc = 150 °C

2.05

2.45

1. Pulse test: t

P = 5 ms,  < 2%

2. Pulse test: t

P = 380 µs,  < 2%

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