STTH60SW03C datasheet(3/9 Pages) STMICROELECTRONICS

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STTH60SW03C

Characteristics

Table 5. Recovery characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1A, VR = 30 V,

dIF/dt = -100 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 30 A, VR = 200 V,

dIF/dt = -200 A/µs

Qrr

Reverse recovery charge

190

Sfactor Softness factor

0.3

tfr

Forward recovery time

Tj = 25 °C

IF = 30 A, VFR = 1.6 V,

dIF/dt = +400 A/µs

180

VFP

Forward recovery voltage

3.5

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, per diode)

I(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

j = 150°C

j = 25°C

V (V)

Figure 3. Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse

duration

I(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

j = 25°C

j = 150°C

V (V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

t(s)

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