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ECMF02-2HSMX6 数据表(PDF) 4 Page - STMicroelectronics |
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ECMF02-2HSMX6 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 17 page ![]() Electrical characteristics ECMF02-2HSMX6 4/17 DocID025079 Rev 2 2 Electrical characteristics Figure 4. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Test conditions Value. Unit VPP ESD discharge (pins 1 and 2) IEC 61000-4-2 level 4 Contact discharge ±8 kV Air discharge ±15 kV IDC Maximum DC current 100 mA TOP Operating temperature range -40 to 85 °C TJ Maximum junction temperature 125 °C Tstg Storage temperature range -55 to +150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit VBR Breakdown voltage IR = 1 mA 6 V IRM Reverse leakage VRM = 3 V 100 nA RDC DC serial resistance 7 9 Ω Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage V = Clamping voltage at I PP I = Peak pulse current BR RM RM RM CL PP V I VCL VBR VRM IF VF I I RM R IPP I = Forward current F V = Forward voltage F |
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