STGIPS20C60T-H datasheet(7/19 Pages) STMICROELECTRONICS

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STGIPS20C60T-H

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 20 A

-1.6

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 20 A, TJ = 125 °C

-1.7

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

100

µA

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 20 A

2.2

Inductive load switching time and energy

ton

Turn-on time

VPN = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 ÷ 5 V,

IC = 20 A

(see Figure 5)

-390

tc(on)

Crossover time (on)

170

toff

Turn-off time

970

tc(off)

Crossover time (off)

150

trr

Reverse recovery time

284

Eon

Turn-on switching losses

520

µJ

Eoff

Turn-off switching losses

460

1. Applied between HINi, LINi and GND for i = U, V, W.

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