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IPU07N03L 数据表(PDF) 3 Page - Infineon Technologies AG |
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IPU07N03L 数据表(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() 2003-01-17 Page 3 IPD07N03L IPU07N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A 29 58 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 180 270 Gate resistance RG - 2.3 - Ω Turn-on delay time td(on) VDD=15V, VGS=10V, ID=15A, RG=3.6Ω - 7.8 11.7 ns Rise time tr - 17 26 Turn-off delay time td(off) - 62 93 Fall time tf - 47 70 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=15A - 4.4 5.5 nC Gate to drain charge Qgd - 14.8 18.1 Gate charge total Qg VDD=15V, ID=15A, VGS=0 to 5V - 26.8 33.5 Output charge Qoss VDS=15V, ID=15A, VGS=0V - 25.5 31.9 nC Gate plateau voltage V(plateau) VDD=15V, ID=15A - 2.5 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inv. diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 51 ns Reverse recovery charge Qrr - 46 58 nC |
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