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STL18N60M2 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL18N60M2
功能描述  N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL18N60M2 数据表(HTML) 3 Page - STMicroelectronics

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STL18N60M2
Electrical ratings
16
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
(1)
1.
The value is rated according to R
thj-case
and limited by package
Drain current (continuous) at T
C
= 25 °C
9
A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C
5.5
A
I
DM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
22
A
P
TOT
(2)
Total dissipation at T
C
= 25 °C
57
W
I
AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
2A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
135
mJ
dv/dt
(3)
3.
I
SD ≤
9 A, di/dt
≤ 400 A/μs, V
DSpeak ≤
V
(BR)DSS
, V
DD
= 400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
4.
V
DS ≤
480 V
MOSFET dv/dt ruggedness
50
V/ns
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
2.2
°C/W
R
thj-amb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-amb max
59
°C/W



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