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STL33N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STL33N60M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() November 2015 DocID024325 Rev 3 1/15 This is information on a product in full production. www.st.com STL33N60M2 N- channel 600 V, 0.115 Ω typ., 22 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on)max ID STL33N60M2 650 V 0.135 Ω 22 A Features Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT™ 8x8 HV Tape and reel 5 1 2 3 4 PowerFLA T™ 8x8 HV |
类似零件编号 - STL33N60M2 |
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类似说明 - STL33N60M2 |
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