STP100N8F6 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STP100N8F6

功能描述	High avalanche ruggedness

PDF	15 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP100N8F6

Electrical ratings

DocID026838 Rev 3

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±20

Drain current (continuous) at TC = 25 °C

100

Drain current (continuous) at TC = 100 °C

IDM(1)

Drain current (pulsed)

400

PTOT

Total dissipation at TC = 25 °C

176

EAS(2)

Single pulse avalanche energy

170

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

°C

Notes:

(1)Pulse width is limited by safe operating area.

(2)Starting Tj = 25 °C, Id = 25 A, Vdd = 40 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

0.85

°C/W

Rthj-amb

Thermal resistance junction-ambient max.

62.5

°C/W

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