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STP220N6F7 数据表(PDF) 3 Page - STMicroelectronics |
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STP220N6F7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STP220N6F7 Electrical ratings DocID026547 Rev 3 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) 120 A ID(1) Drain current (continuous) at TC = 100 °C 120 A IDM(2) Drain current (pulsed) TC = 25 °C 480 A PTOT Total dissipation at TC = 25 °C 237 W EAS(3) Single pulse avalanche energy 1 J TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Notes: (1)Current limited by package (2)Pulse width is limited by safe operating area (3)Starting Tj = 25°C, Id = 20 A, Vdd = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.63 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W |
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