Characteristics

STPSC12H065C

2/8

DocID024809 Rev 3

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

650

V

Forward rms current

22

A

Average forward current

Per diode

6

A

Per device

12

A

Surge non repetitive forward current

60

52

400

A

Repetitive peak forward current

(1), T

25

A

Storage temperature range

-65 to +175

°C

-40 to +175

°C

1.

2.

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Table 3. Thermal resistance parameters

Symbol

Parameter

Typ.

Max.

Unit

Junction to case

Per diode

1.6

2.4

°C/W

Per device

0.875

1.275

Coupling

-

0.15

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

-5

60

µA

-

50

250

(2)

Forward voltage drop

-

1.56

1.75

V

-

1.98

2.5

1.

2.