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RGL1B 数据表(PDF) 2 Page - Diotec Semiconductor |
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RGL1B 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() RGL1A ... RGL1M Characteristics Kennwerte Forward voltage Durchlass-Spannung Tj = 25°C IF = 1 A VF < 1.3 V Leakage current Sperrstrom Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM IR IR < 5 µA < 50 µA Typical junction capacitance Typische Sperrschichtkapzität VR = 4 V Cj 4 pF Reverse recovery time Sperrverzugszeit IF = 0.5 A through/über IR = 1 A to IR = 0.25 A RGL1A...G RGL1J RGL1K...M trr trr trr < 150 ns < 250 ns < 500 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 75 K/W 1) Thermal resistance junction to terminal Wärmewiderstand Sperrschicht − Anschluss RthT < 40 K/W Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 [°C] T A 150 100 50 0 10 1 10 10 10 -1 -2 -3 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 10a-(0.5a-1.2v) |
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