STW72N60DM2AG datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW72N60DM2AG

4/12

DocID027314 Rev 4

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 33 A

0.037

0.042

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

5508

Coss

Output capacitance

241

Crss

Reverse transfer

capacitance

2.8

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

1010

Intrinsic gate resistance

f = 1 MHz open drain

Total gate charge

VDD = 480 V, ID = 66 A,

VGS = 10 V (see Figure 15:

"Test circuit for gate charge

behavior")

121

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 33 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 14: "Test circuit for

resistive load switching times"

and Figure 19: "Switching time

waveform")

Rise time

td(off)

Turn-off delay time

112

Fall time

10.4

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