TSX561 datasheet(5/28 Pages) STMICROELECTRONICS

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DocID023274 Rev 4

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TSX56x, TSX56xA

Electrical characteristics

Table 4. Electrical characteristics at VCC+ = +3.3 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and

RL=10 kΩ connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Offset voltage

TSX56xA, T = 25 °C

600

μV

TSX56xA, -40 °C < T < 125 °C

1800

TSX56x, T = 25 °C

TSX56x, -40 °C < T < 125 °C

2.2

ΔVio/ΔT Input offset voltage drift

-40 °C < T < 125 °C(1)

212

μV/°C

Iio

Input offset current

(Vout = VCC/2)

T = 25 °C

100(2)

-40 °C < T < 125 °C

200(2)

Iib

Input bias current

(Vout = VCC/2)

T = 25 °C

100(2)

-40 °C < T < 125 °C

200(2)

CMR1

Common mode rejection ratio

CMR = 20 log (

ΔVic/ΔVio)

(Vic = -0.1 V to VCC-1.5 V,

Vout = VCC/2, RL > 1 MΩ)

T = 25 °C

-40 °C < T < 125 °C

CMR2

Common mode rejection ratio

CMR = 20 log (

ΔVic/ΔVio)

(Vic = -0.1 V to VCC+0.1 V,

Vout = VCC/2, RL > 1 MΩ)

T = 25 °C

-40 °C < T < 125 °C

Avd

Large signal voltage gain

(Vout = 0.5 V to (VCC - 0.5 V),

RL > 1 MΩ)

T = 25 °C

-40 °C < T < 125 °C

VOH

High level output voltage

(VOH = VCC - Vout)

T = 25 °C

-40 °C < T < 125 °C

100

VOL

Low level output voltage

T = 25 °C

-40 °C < T < 125 °C

100

Iout

Isink (Vout = VCC)

T = 25 °C

4.3

5.3

-40 °C < T < 125 °C

2.5

Isource (Vout = 0 V)

T = 25 °C

3.3

4.3

-40 °C < T < 125 °C

2.5

ICC

Supply current

(per channel, Vout = VCC/2,

RL > 1 MΩ)

T = 25 °C

220

300

µA

-40 °C < T < 125 °C

350

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