08090 datasheet(2/10 Pages) INFINEON

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Data Sheet

2004-04-05

PTF080901

Typical Performance (measurements taken in production test fixture)

Modulation Spectrum

POUT = 40 W, f = 959.8 MHz

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

0.47

0.57

0.67

0.77

0.87

0.97

Quiescent Current (A)

-100

-90

-80

-70

-60

-50

-40

-30

-20

EVM

400 KHz

600 KHz

Output Power (dBm)

EDGE EVM Performance

VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz

EVM

Efficiency

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain–Source Breakdown Voltage

VGS = 0 V, IDS = 10 µA

V(BR)DSS

—

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

On–State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.1

—

Operating Gate Voltage

VDS = 28 V, IDQ = 650 mA

VGS

2.5

3.2

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain–Source Voltage

VDSS

Gate–Source Voltage

VGS

–0.5 to +12

Junction Temperature

200

°C

Total Device Dissipation

335

Above 25°C derate by

1.9

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RθJC

0.52

°C/W

All published data at TCASE = 25°C unless otherwise indicated.

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