ACE1512E

N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.1

2

Ordering information

ACE1512EBMS + H

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

20

V

Zero gate voltage drain current

1

µA

Gate threshold voltage

0.4

0.52

1

V

Gate leakage current

10

µA

Drain-source on-state resistance

16.2

21

mΩ

19.4

25

24.4

33

Forward transconductance

13

S

Diode forward voltage

0.67

1.6

V

Maximum body-diode continuous current

2.5

A

Switching

Total gate charge

13.8

17.94

nC

Gate-source charge

4.1

5.33

Gate-drain charge

5.6

7.28

Turn-on delay time

Ω, R

Ω

6.2

12.4

ns

Turn-on rise time

12.7

25.4

Turn-off delay time

51.7

103.4

Turn-off fall time

16

32

Dynamic

Input capacitance

1160

pF

Output capacitance

104

Reverse transfer capacitance

29

Note :

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

BMS : TSOT-23-3

Pb - free

Halogen - free