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VNH7100AS 数据表(PDF) 13 Page - STMicroelectronics |
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VNH7100AS 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 38 page ![]() DocID028092 Rev 4 13/38 VNH7100AS Electrical specifications 37 Figure 4. TDSTKON VSENSEH MultiSense output voltage in fault condition VCC =13V; RSENSE =1 kΩ – E.g: OUTA in open-load INA =0 V; IOUTA =0A; VOUTA =4 V; VSEL0 =5 V 57 V VOUT_MSD (2) Output Voltage for MultiSense shutdown VINA =5 V; VINB =0 V; VSEL0 =5 V; RSENSE =2.7 kΩ IOUT =2.5 A 5V ISENSE_SAT (2) MultiSense saturation current VCC =13V; VSENSE =4 V; VINA =5 V; VINB =0 V; VSEL0 =5 V; Tj =150 °C 5.8 mA IOUT_SAT (2) Output saturation current VCC =13V; VSENSE =4 V; VINA =5 V; VINB =0 V; VSEL0 =5 V; IOUT = 7 A; Tj = 150°C 7A ISENSEH MultiSense output voltage in fault condition VCC =13V; VSENSE =VSENSEH 720 30 mA 1. Analog sense current drift is deviation of factor K for a given device over (-40 °C to 150 °C and 9V < VCC < 18 V) with respect to its value measured at Tj = 25 °C, VCC = 13 V. 2. Parameter guaranteed by design and characterization; not subjected to production test. Table 10. CS (7 V < VCC < 18 V; -40 °C < Tj < 150 °C) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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