ACE2600B datasheet(2/6 Pages) ACE

2 / 6 page

ACE2600B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

Ordering information

ACE2600B XX + H

Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

Gate Leakage Current

IGSS

VGS=±8V, VDS=0V

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=6.5A

18.3

VGS=2.5V, ID=5.5A

21.7

VGS=1.8V, ID=5A

27.3

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.4

0.56

Forward Transconductance

gFS

VDS=5V, ID=6.5A

Diode Forward Voltage

VSD

ISD=2.5A, VGS=0V

0.81

Maximum Body-Diode Continuous

Current

2.5

Switching

Total Gate Charge

VDS=10V, ID=8A

VGS=4.5V

13.8

17.94

Gate-Source Charge

Qgs

4.1

5.33

Gate-Drain Charge

Qgd

5.6

7.28

Turn-On Delay Time

Td(on)

VDS=10V, VGS=5V

RGEN=3Ω, RL=1.5Ω

6.2

12.4

Turn-On Rise Time

12.7

25.4

Turn-Off Delay Time

td(off)

51.7

103.4

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VDS=10V, VGS=0V

f=1MHz

1160

Output Capacitance

Coss

104

Reverse Transfer Capacitance

Crss

Note:

A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C. The current rating is based on the t

≤ 10s junction to ambient thermal resistance rating.

GM : SOT-23-6L

Pb - free

Halogen - free

ACE2600B 数据表(PDF) 2 Page - ACE Technology Co., LTD.

ACE2600B 数据表(HTML) 2 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6

数据表下载