ACE7010M datasheet(3/7 Pages) ACE

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ACE7010M

N-Channel 100-V (D-S) MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V

VDS = 80 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

140

Drain-Source On-Resistance

rDS(on)

VGS = 10 V, ID = 20 A

mΩ

VGS = 4.5 V, ID = 20 A

Forward Transconductance

gfs

VDS = 15 V, ID = 20 A

Diode Forward Voltage

VSD

IS = 35A, VGS = 0 V

Dynamic

Total Gate Charge

VDS = 50 V, VGS = 5.5 V, ID = 20 A

Gate-Source Charge

Qgs

7.3

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 50 V, RL = 2.5 Ω , ID = 20 A, VGEN = 10 V,

RGEN = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f =1 MHz

1318

Output Capacitance

Coss

147

ReverseTransfer Capacitance

Crss

143

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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