SEMB3 datasheet(2/4 Pages) INFINEON

部件名	SEMB3

功能描述	PNP Silicon Digital Transistor Preliminary data

PDF	4 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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2 / 4 page

SEMB3

Feb-26-2004

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

100

DC current gain 1)

IC = 5 mA, VCE = 5 V

hFE

120

630

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

VCEsat

0.3

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.4

0.8

Input on Voltage

IC = 2 mA, VCE = 0.3 V

Vi(on)

0.5

1.1

Input resistor

3.2

4.7

6.2

Ω

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

200

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t < 300

µs; D < 2%

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