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SPU07N20 数据表(PDF) 1 Page - Infineon Technologies AG |
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SPU07N20 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  Data Sheet 1 05.99 SIPMOS ® Power Transistor Product Summary Drain source voltage 200 VDS V Drain-Source on-state resistance Ω 0.4 RDS(on) ID Continuous drain current 7 A Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Pin 2 Pin 3 G D S Packaging Type Package Ordering Code SPD07N20 Tape and Reel P-TO252 Q67040-S4120-A2 SPU07N20 Tube Q67040-S4112-A2 P-TO251 Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Value Continuous drain current TC = 25 ˚C TC = 100 ˚C 7 4.5 ID A Pulsed drain current TC = 25 ˚C IDpulse 28 Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω mJ EAS 120 Avalanche energy, periodic limited by Tjmax 4 EAR Reverse diode d v/dt IS = 7 A, VDS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C d v/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot 40 W Operating and storage temperature Tj , Tstg ˚C -55... +175 55/150/56 IEC climatic category; DIN IEC 68-1 Preliminary Data SPD 07N20 |
类似零件编号 - SPU07N20 |
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类似说明 - SPU07N20 |
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