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SPP07N60C2 数据表(PDF) 2 Page - Infineon Technologies AG |
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SPP07N60C2 数据表(HTML) 2 Page - Infineon Technologies AG |
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2 / 14 page ![]() 2002-08-12 Page 2 SPP07N60C2, SPB07N60C2 SPA07N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.5 K/W Thremal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA - - - 35 62 - Linear derating factor - - 0.66 W/K Linear derating factor, FullPAK - - 0.25 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 600 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=7.3A V(BR)DS - 700 - Gate threshold voltage, VGS = VDS ID=350µA VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS - - 0.1 - 1 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=4.6A, Tj=25°C RDS(on) - 0.54 0.6 Ω Gate input resistance f = 1 MHz, open drain RG - 0.8 - |
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